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Same model may have multiple batches, images only for reference.
IXTK60N50L2 Real Image
Same model may have multiple batches, images only for reference.

IXTK60N50L2

Part No IXTK60N50L2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 60A TO264 / N-Channel 500 V 60A (Tc) 960W (Tc) Through Hole TO-264 (IXTK)
Datasheet
IXTK60N50L2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series Linear L2™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 610 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 24000 pF @ 25 V
Power Dissipation (Max) 960W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-264 (IXTK)
Package / Case TO-264-3, TO-264AA
Base Product Number IXTK60
Standard Package 25
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1346825-IXTK60N50L2
Ultra Librarian 3D Model Ultra Librarian IXTK60N50L2 CAD Model

Description

The IXTK60N50L2 is an N-channel MOSFET transistor designed for use in discrete semiconductor products.

  • Drain to Source Voltage (Vdss): 500 V
  • Current Continuous Drain (Id): 60A (Tc)
  • Power Dissipation: 960W (Tc)
  • Mounting Type: Through-hole
  • Package / Case: TO-264-3, TO-264AA
  • Series: Linear L2™
  • ECCN: EAR99

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