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IXTK82N25P

Part No IXTK82N25P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 82A TO-264 / Trans MOSFET N-CH 250V 82A 3-Pin(3+Tab) TO-264
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Series PolarHT
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 250V
Current - Continuous Drain (Id) @ 25°C 82A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 142nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 4800pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 500W (Tc)
Rds On (Maximum) @ Id, Vgs 35 mOhm @ 41A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-264 (IXTK)
Package TO-264-3, TO-264AA
Win Source Part Number 777655-IXTK82N25P
Popularity Medium
Supply and Demand Status Limited
Family Name IXTK82N25P
Introduction Date July 16, 2014
Estimated EOL Date 2030
Ultra Librarian 3D Model Ultra Librarian IXTK82N25P CAD Model

Description

The IXYS IXTK82N25P is a MOSFET technology discrete semiconductor product manufactured by IXYS.

  • Current Rating @ 25°C: 82A (Tc)
  • Gate Voltage: 10V
  • Power Dissipation (Tc): 500W
  • Package: TO-264-3, TO-264AA
  • Mounting: Through-hole
  • Series: PolarHT
  • Family Name: IXTK82N25P
  • Channel Type: N
  • Drain Source Voltage: 250V
  • Vgs(th) (maximum) @ Id: 5V @ 250μA
  • Gate Charge (Qg) (maximum) @ Vgs: 142nC @ 10V
  • Input Capacitance (Ciss) (maximum) @ Vds: 4800pF @ 25V
  • Rds On (maximum) @ Id, Vgs: 35 mOhm @ 41A, 10V
  • Estimated EOL Date: 2030

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $6.0160 $54.1440
21+ $4.9362 $103.6602
32+ $4.7820 $153.0240
44+ $4.6277 $203.6188
56+ $4.4735 $250.5160
75+ $4.0107 $300.8025
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 800 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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