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Same model may have multiple batches, images only for reference.
IXTN102N65X2 Real Image
Same model may have multiple batches, images only for reference.

IXTN102N65X2

Part No IXTN102N65X2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 76A SOT227 / N-Channel 650 V 76A (Tc) 595AW (Tc) Chassis Mount SOT-227
Datasheet
IXTN102N65X2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer IXYS
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 30mOhm @ 51A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 152 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 10900 pF @ 25 V
Power Dissipation (Max) 595AW (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Chassis Mount
Supplier Device Package SOT-227
Case / Package SOT-227-4, miniBLOC
Base Product Number IXTN102
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 10
Win Source Part Number 1324373-IXTN102N65X2
Ultra Librarian 3D Model Ultra Librarian IXTN102N65X2 CAD Model

Description

The 1324373-IXTN102N65X2 is an N-channel MOSFET transistor with a drain to source voltage of 650V and a continuous drain current of 76A.

  • Maximum on-resistance: 30mOhm @ 51A and 10V
  • Gate charge: 152nC @ 10V
  • Input capacitance: 10900pF @ 25V
  • Package: SOT-227

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