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Same model may have multiple batches, images only for reference.
IXTN110N20L2 Real Image
Same model may have multiple batches, images only for reference.

IXTN110N20L2

Part No IXTN110N20L2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 100A SOT227B / N-Channel 200 V 100A (Tc) 735W (Tc) Chassis Mount SOT-227B
Datasheet
IXTN110N20L2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer IXYS
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 24mOhm @ 55A, 10V
Vgs(th) (Max) @ Id 4.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs 500 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 23000 pF @ 25 V
Power Dissipation (Max) 735W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Chassis Mount
Supplier Device Package SOT-227B
Case / Package SOT-227-4, miniBLOC
Base Product Number IXTN110
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 10
Win Source Part Number 1324570-IXTN110N20L2
Ultra Librarian 3D Model Ultra Librarian IXTN110N20L2 CAD Model

Description

The IXYS IXTN110N20L2 is an active electronic component manufactured by IXYS.

  • Mounting: Chassis
  • Case/Package: SOT-227-4, miniBLOC
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Rds On (Max) @ Id, Vgs: 24mOhm @ 55A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 3mA
  • Power Dissipation (Max): 735W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
  • Vgs (Max): ±20V
  • ROHS3 Compliant: Yes

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