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IXTP110N055P

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Part No	IXTP110N055P
Manufacturer	IXYS
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 55V 110A TO-220
Datasheet	IXTP110N055P Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	IXYS
Packaging	Tube/Rail
Status	Active
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	55V
Continuous Drain Current at 25°C	110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Gate-Source Threshold Voltage	5.5V @ 250μA
Max Gate Charge	76nC @ 10V
Max Input Capacitance	2210pF @ 25V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	390W (Tc)
Maximum Rds On at Id,Vgs	13.5 mOhm @ 500mA, 10V
Temperature Range - Operating	-55°C to 175°C (TJ)
Mounting	Through Hole
Case / Package	TO-220AB
Dimension	TO-220-3
Win Source Part Number	1049858-IXTP110N055P
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian IXTP110N055P CAD Model

Alternative Products

Description

The IXYS IXTP110N055P is a MOSFET technology-based N-channel polarity semiconductor product with a power dissipation (max) of 390W (Tc).

Mounting Type: Through Hole
Packaging: Tube/Rail
Drive Voltage (Max Rds On, Min Rds On): 10V
Case/Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 110A (Tc)
Gate-Source Threshold Voltage: 5.5V @ 250μA
Max Gate Charge: 76nC @ 10V
Max Input Capacitance: 2210pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 13.5 mOhm @ 500mA, 10V
Supply and Demand Status: balanced

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