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Same model may have multiple batches, images only for reference.
IXTP130N10T Real Image
Same model may have multiple batches, images only for reference.

IXTP130N10T

Part No IXTP130N10T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description TrenchMVTM Power MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Series TrenchMV
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 104nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 5080pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 360W (Tc)
Rds On (Maximum) @ Id, Vgs 9.1 mOhm @ 25A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220AB
Package TO-220-3
Win Source Part Number 1191276-IXTP130N10T
Manufacturer Homepage www.ixys.com
Family Name IXTP130N10T
Introduction Date December 14, 2006
ECCN EAR99
Estimated EOL Date 2024
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXTP130N10T CAD Model

Description

The IXTP130N10T is a high-performance MOSFET transistor designed for use in a wide range of applications.

  • Series: TrenchMV
  • Package: TO-220-3
  • Maximum Continuous Drain Current: 130A @ 25°C
  • Maximum Power Dissipation: 360W @ Tc
  • Maximum Drain-Source Voltage: 100V
  • Maximum Gate-Source Voltage: ±30V
  • Rds on Resistance: 9.1 mOhm @ 25A and 10V
  • Gate Charge: 104nC @ 10V

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Quantity Unit Price Ext. Price
19+ $3.1496 $59.8424
45+ $2.5842 $116.2890
70+ $2.5035 $175.2450
96+ $2.4227 $232.5792
124+ $2.3420 $290.4080
166+ $2.0997 $348.5502
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Availability: 18,990 pieces
MOQ: 19 pcs
Order Increment : 1 pcs
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