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Same model may have multiple batches, images only for reference.
IXTP14N60PM Real Image
Same model may have multiple batches, images only for reference.

IXTP14N60PM

Part No IXTP14N60PM
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 7A TO-220
Datasheet
IXTP14N60PM Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 250μA
Max Gate Charge 36nC @ 10V
Max Input Capacitance 2500pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 75W (Tc)
Maximum Rds On at Id,Vgs 550 mOhm @ 7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220 Isolated Tab
Dimension TO-220-3 Isolated Tab
Win Source Part Number 1049865-IXTP14N60PM
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXTP14N60PM CAD Model

Description

The IXYS MOSFET is a high-quality N-Channel MOSFET that is perfect for various applications.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 7A (Tc)
  • Supply and Demand Status: balanced
  • Package: TO-220 Isolated Tab
  • Technology: MOSFET
  • Temperature Range: -55°C to 150°C (TJ)
  • Drive Voltage: 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.5891 $58.9100
240+ $0.4828 $115.8720
375+ $0.4678 $175.4250
515+ $0.4528 $233.1920
660+ $0.4377 $288.8820
885+ $0.3927 $347.5395
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,400 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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