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Same model may have multiple batches, images only for reference.
IXTP18P10T Real Image
Same model may have multiple batches, images only for reference.

IXTP18P10T

Part No IXTP18P10T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 18A TO-220
Datasheet
IXTP18P10T Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 39nC @ 10V
Max Input Capacitance 2100pF @ 25V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 120 mOhm @ 9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1049873-IXTP18P10T
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian IXTP18P10T CAD Model

Description

The IXYS P-Channel MOSFET is a high-performance transistor with a drain-source breakdown voltage of 100V and a continuous drain current of 18A (Tc) at 25°C.

  • Manufacturer: IXYS
  • Channel Type: P-Channel MOSFET
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current @ 25°C: 18A (Tc)
  • Maximum Rds On @ 9A, 10V: 120 mOhm
  • Package: TO-220AB
  • Mounting: Through-Hole
  • Maximum Gate Charge: 39nC @ 10V
  • Input Capacitance: 2100pF @ 25V
  • Temperature Range: -55°C to 150°C (TJ)
  • RoHS Compliant: Yes

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