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Same model may have multiple batches, images only for reference.
IXTP1N80P Real Image
Same model may have multiple batches, images only for reference.

IXTP1N80P

Part No IXTP1N80P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 1A TO220AB / N-Channel 800 V 1A (Tc) 42W (Tc) Through Hole TO-220-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer IXYS
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 14Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 9 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 250 pF @ 25 V
Power Dissipation (Max) 42W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Through Hole
Supplier Device Package TO-220-3
Case / Package TO-220-3
Base Product Number IXTP1
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 1324120-IXTP1N80P
Ultra Librarian 3D Model Ultra Librarian IXTP1N80P CAD Model

Description

The IXYS IXTP1N80P is an N-channel MOSFET transistor that is used to switch and amplify electronic signals.

  • Manufacturer: IXYS
  • Maximum Drain to Source Voltage: 800V
  • Maximum Continuous Drain Current: 1A @ 25°C
  • Supply and Demand Status: balanced

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