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IXTP1R6N50D2

Part No IXTP1R6N50D2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 1.6A TO220AB  /  N-Channel 500 V 1.6A (Tc) 100W (Tc) Through Hole TO-220-3
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series Depletion
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 1.6A (Tc)
Rds On (Max) @ Id, Vgs 2.3Ohm @ 800mA, 0V
Gate Charge (Qg) (Max) @ Vgs 23.7 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 645 pF @ 25 V
FET Feature Depletion Mode
Power Dissipation (Max) 100W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Base Product Number IXTP1
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 965546-IXTP1R6N50D2
Ultra Librarian 3D Model Ultra Librarian IXTP1R6N50D2 CAD Model

Description

This electronic component is a depletion mode N-channel MOSFET manufactured by IXYS.

  • Win Source Part Number: 965546-IXTP1R6N50D2
  • Package: TO-220-3
  • Standard Package: 50
  • Drain to Source Voltage (Vdss): 500V
  • Current Continuous Drain (Id) @ 25°C: 1.6A (Tc)
  • Rds On (Max) @ Id, Vgs: 2.3Ohm @ 800mA, 0V
  • Supply and Demand: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
21+ $2.8726 $60.3246
50+ $2.3570 $117.8500
76+ $2.2834 $173.5384
105+ $2.2097 $232.0185
136+ $2.1361 $290.5096
181+ $1.9151 $346.6331
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,380 pieces
MOQ: 21 pcs
Order Increment : 1 pcs
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