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IXTP260N055T2

Part No IXTP260N055T2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 260A TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 260A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 140nC @ 10V
Max Input Capacitance 10800pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 480W (Tc)
Maximum Rds On at Id,Vgs 3.3 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1006592-IXTP260N055T2
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian IXTP260N055T2 CAD Model

Description

This component comes in tube/rail packaging and has a mounting style of through hole.

  • Power Dissipation: 480W (Tc)
  • Drain-Source Breakdown Voltage: 55V
  • Supply and Demand Status: Balanced
  • Quantity per Package: 50
  • Application: Industrial

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $5.5439 $60.9829
26+ $4.5489 $118.2714
40+ $4.4068 $176.2720
55+ $4.2646 $234.5530
71+ $4.1224 $292.6904
94+ $3.6960 $347.4240
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,170 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?

Shipping Information

Shipped from HK warehouse
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