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Same model may have multiple batches, images only for reference.
IXTP2R4N50P Real Image
Same model may have multiple batches, images only for reference.

IXTP2R4N50P

Part No IXTP2R4N50P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 2.4A TO220AB / N-Channel 500 V 2.4A (Tc) 55W (Tc) Through Hole TO-220-3
Datasheet
IXTP2R4N50P Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series PolarHV™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.75Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 5.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 6.1 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 240 pF @ 25 V
Power Dissipation (Max) 55W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Base Product Number IXTP2
Standard Package 50
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1346673-IXTP2R4N50P
Ultra Librarian 3D Model Ultra Librarian IXTP2R4N50P CAD Model

Description

IXYS's 1346673-IXTP2R4N50P is a discrete semiconductor product that belongs to the Transistors - FETs, MOSFETs - Single FETs, MOSFETs category.

  • Series: PolarHV™
  • Package: TO-220-3
  • Power Dissipation: 55W (Tc)
  • Drain to Source Voltage (Vdss): 500 V
  • FET Type: N-Channel MOSFET
  • Gate Charge: 6.1 nC @ 10 V
  • Current Continuous Drain (Id) @ 25°C: 2.4A (Tc)
  • Rds On (Max) @ Id, Vgs: 3.75Ohm @ 500mA, 10V
  • Popularity: Unknown
  • Status: Obsolete

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