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Same model may have multiple batches, images only for reference.
IXTP36P15P Real Image
Same model may have multiple batches, images only for reference.

IXTP36P15P

Part No IXTP36P15P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description P-Channel Enhancement Mode Avalanche Rated
Datasheet
IXTP36P15P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Series PolarP
Packaging Tube
Channel Type Type P
Technology MOSFET
Drain Source Voltage 150V
Current - Continuous Drain (Id) @ 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 55nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 3100pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 300W (Tc)
Rds On (Maximum) @ Id, Vgs 110 mOhm @ 18A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220AB
Package TO-220-3
Win Source Part Number 1191284-IXTP36P15P
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Family Name IXTP36P15P
Introduction Date October 16, 2007
ECCN EAR99
Country of Origin United States of America
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian IXTP36P15P CAD Model

Description

The IXYS IXTP36P15P is a P-channel MOSFET designed for use in various applications such as industrial control, motor drives, and power management.

  • Channel Type: P-Channel
  • Drain-Source Voltage: 150V
  • Continuous Drain Current (Id): 36A (Tc)
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Gate Charge: 55nC @ 10V
  • Mounting Type: Through Hole
  • Package: TO-220-3
  • Power Dissipation: 300W (Tc)
  • Rds On (Max): 110 mOhm @ 18A, 10V
  • Product Status: Active
  • Popularity: Medium

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