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Same model may have multiple batches, images only for reference.
IXTP3N50D2 Real Image
Same model may have multiple batches, images only for reference.

IXTP3N50D2

Part No IXTP3N50D2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 3A TO220AB
Datasheet
IXTP3N50D2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 3A (Tc)
Max Gate Charge 40nC @ 5V
Max Input Capacitance 1070pF @ 25V
Maximum Gate-Source Voltage ±20V
FET Feature Depletion Mode
Power Dissipation (Max) 125W (Tc)
Maximum Rds On at Id,Vgs 1.5 Ohm @ 1.5A, 0V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1049888-IXTP3N50D2
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXTP3N50D2 CAD Model

Description

The IXTP3N50D2 is a depletion mode N-channel MOSFET from IXYS.

  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 3A (Tc)
  • Maximum Gate Charge: 40nC @ 5V
  • Maximum Input Capacitance: 1070pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Package: TO-220AB
  • Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $4.9662 $54.6282
25+ $4.0749 $101.8725
38+ $3.9475 $150.0050
53+ $3.8202 $202.4706
68+ $3.6929 $251.1172
91+ $3.3108 $301.2828
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Availability: 10 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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