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Same model may have multiple batches, images only for reference.
IXTP44P15T Real Image
Same model may have multiple batches, images only for reference.

IXTP44P15T

Part No IXTP44P15T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 150V 44A TO220AB / P-Channel 150 V 44A (Tc) 298W (Tc) Through Hole TO-220-3
Datasheet
IXTP44P15T Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series TrenchP™
Package Tube
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 65mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 175 nC @ 10 V
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 13400 pF @ 25 V
Power Dissipation (Max) 298W (Tc)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Base Product Number IXTP44
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 1191411-IXTP44P15T
Ultra Librarian 3D Model Ultra Librarian IXTP44P15T CAD Model

Description

The IXTP44P15T is a P-channel MOSFET transistor designed for use in discrete semiconductor products, specifically single MOSFETs.

  • Type: P-channel MOSFET
  • Series: TrenchP™
  • Drain to Source Voltage: 150V
  • Continuous Drain Current: 44A @ 25°C
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 500mA, 10V
  • Gate Charge: 175 nC @ 10 V
  • Input Capacitance: 13400 pF @ 25 V
  • Vgs (Max): ±15V
  • Power Dissipation: 298W (Tc)
  • Mounting Type: Through Hole
  • Package: TO-220-3

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