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Same model may have multiple batches, images only for reference.
IXTP48P05T Real Image
Same model may have multiple batches, images only for reference.

IXTP48P05T

Part No IXTP48P05T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 50V 48A TO-220
Datasheet
IXTP48P05T Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 50V
Continuous Drain Current at 25°C 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 53nC @ 10V
Max Input Capacitance 3660pF @ 25V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 30 mOhm @ 24A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1049893-IXTP48P05T
Popularity Medium
Supply and Demand Status Balance
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian IXTP48P05T CAD Model

Description

The IXYS IXTP48P05T is a P-channel MOSFET with a drain-source breakdown voltage of 50V and a continuous drain current of 48A at 25°C.

  • Power Dissipation: 150W
  • Maximum Gate-Source Voltage: ±15V
  • Mounting Type: Through Hole
  • Package: TO-220-3
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Maximum Gate Charge: 53nC @ 10V
  • Maximum Input Capacitance: 3660pF @ 25V
  • Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
19+ $3.1994 $60.7886
44+ $2.6253 $115.5132
69+ $2.5433 $175.4877
94+ $2.4613 $231.3622
122+ $2.3793 $290.2746
163+ $2.1333 $347.7279
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Availability: 20,000 pieces
MOQ: 19 pcs
Order Increment : 1 pcs
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