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Same model may have multiple batches, images only for reference.
IXTP50N20P Real Image
Same model may have multiple batches, images only for reference.

IXTP50N20P

Part No IXTP50N20P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 50A TO-220
Datasheet
IXTP50N20P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 70nC @ 10V
Max Input Capacitance 2720pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 360W (Tc)
Maximum Rds On at Id,Vgs 60 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 139505-IXTP50N20P
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXTP50N20P CAD Model

Description

The IXTP50N20P is an N-channel MOSFET manufactured by IXYS.

  • Maximum Power Dissipation: 360W @ Tc
  • Temperature Range: -55°C to 175°C
  • Package: TO-220AB case
  • Dimension: TO-220-3
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 50A @ 25°C
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 70nC @ 10V
  • Maximum Input Capacitance: 2720pF @ 25V
  • Maximum Rds On: 60 mOhm @ 50A and 10V
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
15+ $3.8658 $57.9870
37+ $3.1728 $117.3936
57+ $3.0735 $175.1895
78+ $2.9741 $231.9798
101+ $2.8748 $290.3548
135+ $2.5780 $348.0300
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Availability: 6,800 pieces
MOQ: 15 pcs
Order Increment : 1 pcs
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