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Same model may have multiple batches, images only for reference.
IXTP6N50D2 Real Image
Same model may have multiple batches, images only for reference.

IXTP6N50D2

Part No IXTP6N50D2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 6A TO220AB / N-Channel 500 V 6A (Tc) 300W (Tc) Through Hole TO-220-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer IXYS
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Rds On (Max) @ Id, Vgs 500mOhm @ 3A, 0V
Gate Charge (Qg) (Max) @ Vgs 96 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2800 pF @ 25 V
FET Feature Depletion Mode
Power Dissipation (Max) 300W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Through Hole
Supplier Device Package TO-220-3
Case / Package TO-220-3
Base Product Number IXTP6
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 1324573-IXTP6N50D2
Ultra Librarian 3D Model Ultra Librarian IXTP6N50D2 CAD Model

Description

The IXYS IXTP6N50D2 is a Depletion Mode N-Channel MOSFET semiconductor product that is manufactured by IXYS.

  • Standard Package: 50
  • Win Source Part Number: 1324573-IXTP6N50D2
  • Applications: Transistors - FETs, MOSFETs - Single
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Rds On (Max) @ Id, Vgs: 500mOhm @ 3A, 0V
  • Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 5 V

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $14.4115 $57.6460
9+ $11.8248 $106.4232
14+ $11.4553 $160.3742
19+ $11.0858 $210.6302
24+ $10.7163 $257.1912
32+ $9.6077 $307.4464
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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