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IXTP88N085T

Part No IXTP88N085T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 85V 88A TO220AB
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series TrenchMV™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 85 V
Current - Continuous Drain (Id) @ 25°C 88A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 11mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 69 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3140 pF @ 25 V
Power Dissipation (Max) 230W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Base Product Number IXTP88
Standard Package 50 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 876143-IXTP88N085T
Ultra Librarian 3D Model Ultra Librarian IXTP88N085T CAD Model

Description

The IXTP88N085T is a N-Channel MOSFET transistor from the TrenchMV™ series by IXYS.

  • Package: TO-220-3 package
  • Mounting: designed for through-hole mounting.
  • Drain-to-source voltage (Vdss): 85V
  • Continuous drain current (Id): 88A @ 25°C
  • On-state resistance (Rds On): 11mOhm @ 25A and 10V gate-to-source voltage (Vgs).
  • Gate threshold voltage (Vgs(th)): 4V @ 100µA
  • Maximum power dissipation: 230W
  • Suitable for: high-power applications.
  • Gate charge (Qg): 69nC @ 10V
  • Input capacitance (Ciss): 3140pF @ 25V
  • Operating temperature range: -55°C to 175°C
  • REACH: unaffected
  • Obsolete product: manufactured by IXYS, a renowned brand in the electronic components industry.

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