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Same model may have multiple batches, images only for reference.
IXTP8N65X2 Real Image
Same model may have multiple batches, images only for reference.

IXTP8N65X2

Part No IXTP8N65X2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 8A TO220 / N-Channel 650 V 8A (Tc) 150W (Tc) Through Hole TO-220
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer IXYS
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 500mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 800 pF @ 25 V
Power Dissipation (Max) 150W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Through Hole
Supplier Device Package TO-220
Case / Package TO-220-3
Base Product Number IXTP8
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 1324118-IXTP8N65X2
Ultra Librarian 3D Model Ultra Librarian IXTP8N65X2 CAD Model

Description

The IXYS 1324118-IXTP8N65X2 is an N-channel MOSFET transistor that is designed to provide a maximum drain to source voltage of 650V and a maximum continuous drain current of 8A.

  • Drain to Source Voltage: 650V
  • Continuous Drain Current: 8A
  • Package: TO-220 package
  • Mounting: through-hole mounting applications
  • Gate Charge: 12nC @ 10V
  • Input Capacitance: 800pF @ 25V

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.8392 $64.3720
80+ $1.5091 $120.7280
120+ $1.4620 $175.4400
165+ $1.4149 $233.4585
215+ $1.3677 $294.0555
285+ $1.2261 $349.4385
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,750 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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