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Same model may have multiple batches, images only for reference.
IXTQ250N075T Real Image
Same model may have multiple batches, images only for reference.

IXTQ250N075T

Part No IXTQ250N075T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 250A TO3P / N-Channel 75 V 250A (Tc) 550W (Tc) Through Hole TO-3P
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series TrenchMV™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V
Current - Continuous Drain (Id) @ 25°C 250A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9900 pF @ 25 V
Power Dissipation (Max) 550W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P
Package / Case TO-3P-3, SC-65-3
Base Product Number IXTQ250
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1346809-IXTQ250N075T
Ultra Librarian 3D Model Ultra Librarian IXTQ250N075T CAD Model

Description

The IXTQ250N075T is an N-Channel MOSFET transistor from IXYS.

  • Series: TrenchMV™
  • Product: Discrete Semiconductor
  • Power Dissipation: 550W (Tc)
  • Drain-to-Source Voltage (Vdss): 75V
  • Mounting Type: Through-Hole
  • Package: TO-3P-3, SC-65-3
  • Gate-Source Voltage (Vgs): ±20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Current-Continuous Drain (Id): 250A (Tc)
  • On-Resistance (Rds On): 4mOhm @ 50A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 25 V

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