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Same model may have multiple batches, images only for reference.
IXTQ26N50P Real Image
Same model may have multiple batches, images only for reference.

IXTQ26N50P

Part No IXTQ26N50P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 26A TO-3P
Datasheet
IXTQ26N50P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 250μA
Max Gate Charge 65nC @ 10V
Max Input Capacitance 3600pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 400W (Tc)
Maximum Rds On at Id,Vgs 230 mOhm @ 13A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-3P
Dimension TO-3P-3, SC-65-3
Win Source Part Number 205715-IXTQ26N50P
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXTQ26N50P CAD Model

Description

The IXTQ26N50P is an N-channel MOSFET designed for use in a variety of applications.

  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 26A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 5.5V @ 250μA
  • Max Gate Charge: 65nC @ 10V
  • Max Input Capacitance: 3600pF @ 25V
  • Maximum Gate-Source Voltage: ±30V
  • Case / Package: TO-3P-3, SC-65-3
  • Mounting: Through hole
  • Power Dissipation (max): 400W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $6.7136 $60.4224
21+ $5.5087 $115.6827
33+ $5.3365 $176.1045
45+ $5.1644 $232.3980
58+ $4.9921 $289.5418
78+ $4.4758 $349.1124
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Availability: 3,100 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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