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IXTQ36N50P Real Image1 IXTQ36N50P Real Image2
Same model may have multiple batches, images only for reference.
IXTQ36N50P Real Image1 IXTQ36N50P Real Image2
IXTQ36N50P Real Image1 IXTQ36N50P Real Image2
Same model may have multiple batches, images only for reference.

IXTQ36N50P

Part No IXTQ36N50P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 36A TO-3P
Datasheet
IXTQ36N50P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 85nC @ 10V
Max Input Capacitance 5500pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 540W (Tc)
Maximum Rds On at Id,Vgs 170 mOhm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-3P
Dimension TO-3P-3, SC-65-3
Win Source Part Number 1049931-IXTQ36N50P
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXTQ36N50P CAD Model

Description

The IXTQ36N50P MOSFET from IXYS is a through-hole mounted N-channel polarity transistor.

  • Power Dissipation: 540W (Tc)
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 36A (Tc) @ 25°C
  • Maximum Rds On at Id,Vgs: 170 mOhm @ 500mA, 10V
  • Maximum Gate-Source Voltage: ±30V
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $8.8635 $62.0445
16+ $7.2719 $116.3504
25+ $7.0455 $176.1375
34+ $6.8180 $231.8120
44+ $6.5904 $289.9776
59+ $5.9090 $348.6310
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Availability: 9,600 pieces
MOQ: 7 pcs
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