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Same model may have multiple batches, images only for reference.
IXTQ50N25T Real Image
Same model may have multiple batches, images only for reference.

IXTQ50N25T

Part No IXTQ50N25T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 250V 50A 3-Pin(3+Tab) TO-3P / MOSFET N-CH 250V 50A TO-3P
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 1mA
Max Gate Charge 78nC @ 10V
Max Input Capacitance 4000pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 400W (Tc)
Maximum Rds On at Id,Vgs 60 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-3P
Dimension TO-3P-3, SC-65-3
Win Source Part Number 1049938-IXTQ50N25T
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name IXTQ50N25T
Introduction Date January 28, 2010
Country of Origin Republic of Korea
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IXTQ50N25T CAD Model

Description

The IXYS IXTQ50N25T is a MOSFET with a drain-source breakdown voltage of 250V and continuous drain current @ 25°C of 50A (Tc).

  • Drain-Source Breakdown Voltage: 250V
  • Continuous Drain Current @ 25°C: 50A (Tc)
  • Packaging: Tube/Rail
  • Mounting Style: Through Hole
  • Maximum Rds On @ Id,Vgs: 60 mOhm @ 25A, 10V
  • Max Gate Charge: 78nC @ 10V
  • Popularity: High
  • Supply and Demand Status: Sufficient
  • Temperature Range - Operating: -55°C to 150°C (TJ)
  • Case / Package: TO-3P

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Pricing & Ordering

Quantity Unit Price Ext. Price
20+ $2.5699 $51.3980
42+ $2.4073 $101.1066
65+ $2.3259 $151.1835
93+ $2.1633 $201.1869
121+ $2.0820 $251.9220
150+ $2.0006 $300.0900
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Availability: 670 pieces
MOQ: 20 pcs
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