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Same model may have multiple batches, images only for reference.
IXTQ62N15P Real Image
Same model may have multiple batches, images only for reference.

IXTQ62N15P

Part No IXTQ62N15P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 62A TO-3P
Datasheet
IXTQ62N15P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 62A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 250μA
Max Gate Charge 70nC @ 10V
Max Input Capacitance 2250pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 350W (Tc)
Maximum Rds On at Id,Vgs 40 mOhm @ 31A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-3P
Dimension TO-3P-3, SC-65-3
Win Source Part Number 1049939-IXTQ62N15P
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXTQ62N15P CAD Model

Description

The IXYS 1049939-IXTQ62N15P is a N-Channel MOSFET with a drain-source breakdown voltage of 150V and a continuous drain current @ 25°C of 62A (Tc).

  • Gate-Source Threshold Voltage: 5.5V @ 250μA
  • Maximum Gate Charge: 70nC @ 10V
  • Maximum Input Capacitance: 2250pF @ 25V
  • Maximum Rds On at Id,Vgs: 40 mOhm @ 31A, 10V
  • Mounting: Through hole
  • Package: TO-3P case
  • Supply and Demand: Limited

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