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Same model may have multiple batches, images only for reference.
IXTQ82N25P Real Image
Same model may have multiple batches, images only for reference.

IXTQ82N25P

Part No IXTQ82N25P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 82A TO-3P
Datasheet
IXTQ82N25P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 82A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 142nC @ 10V
Max Input Capacitance 4800pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 500W (Tc)
Maximum Rds On at Id,Vgs 35 mOhm @ 41A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-3P
Dimension TO-3P-3, SC-65-3
Win Source Part Number 1049947-IXTQ82N25P
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTQ82N25P CAD Model

Description

The IXTQ82N25P MOSFET from IXYS is a through-hole mounted N-channel polarity transistor.

  • Mounting: Through-hole
  • Channel Polarity: N-channel
  • Power Dissipation: 500W (Tc)
  • Drain-Source Breakdown Voltage: 250V
  • Continuous Drain Current @ 25°C: 82A (Tc)
  • Maximum Rds On @ Id,Vgs: 35 mOhm @ 41A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.1904 $50.2848
26+ $3.9252 $102.0552
40+ $3.7926 $151.7040
57+ $3.5274 $201.0618
74+ $3.3948 $251.2152
92+ $3.2622 $300.1224
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,580 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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