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Same model may have multiple batches, images only for reference.
IXTT170N10P Real Image
Same model may have multiple batches, images only for reference.

IXTT170N10P

Part No IXTT170N10P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 170A TO268  /  N-Channel 100 V 170A (Tc) 715W (Tc) Surface Mount TO-268AA
Datasheet
IXTT170N10P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series Polar
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 170A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 198 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6000 pF @ 25 V
Power Dissipation (Max) 715W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-268AA
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Base Product Number IXTT170
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 30
Win Source Part Number 1188698-IXTT170N10P
Ultra Librarian 3D Model Ultra Librarian IXTT170N10P CAD Model

Description

The 1188698-IXTT170N10P is a single N-channel MOSFET transistor with a drain to source voltage of 100V and a continuous drain current of 170A.

  • Channel Type: N-Channel
  • Drain to Source Voltage: 100V
  • Continuous Drain Current: 170A
  • On-Resistance: 9mOhm @ 500mA and 10V
  • Gate Charge: 198nC @ 10V
  • Input Capacitance: 6000pF @ 25V
  • Package: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268AA

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