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IXTT220N20X4HV

Part No IXTT220N20X4HV
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 220A X4 TO268HV / N-Channel 200 V 220A (Tc) 800W (Tc) Surface Mount TO-268HV (IXTT)
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Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series Ultra X4
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 220A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5.5mOhm @ 110A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 157 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 12300 pF @ 25 V
Power Dissipation (Max) 800W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-268HV (IXTT)
Package / Case TO-268-3, D³Pak (2 Leads + Tab) , TO-268AA
Base Product Number IXTT220
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1346866-IXTT220N20X4HV
Ultra Librarian 3D Model Ultra Librarian IXTT220N20X4HV CAD Model

Description

The 1346866-IXTT220N20X4HV is an N-Channel MOSFET transistor from the Ultra X4 series.

  • Series: Ultra X4
  • Drain to Source Voltage: 200V
  • Power Dissipation: 800W (Tc)
  • Mounting Type: Surface Mount
  • Package: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
  • Gate-Source Voltage: ±20V
  • Operating Temperature: -55°C to 175°C (TJ)
  • Continuous Drain Current: 220A (Tc)
  • On-Resistance: 5.5mOhm @ 110A and 10V
  • Gate Charge: 157nC @ 10V
  • Input Capacitance: 12,300pF @ 25V
  • Ideal for: power supplies, motor control, and DC-DC converters.

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