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IXTT75N20L2

Part No IXTT75N20L2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 75A DPAK
Sample
Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series Linear L2™
Package Tube
Base Product Number IXTT75
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1346744-IXTT75N20L2
Ultra Librarian 3D Model Ultra Librarian IXTT75N20L2 CAD Model

Description

The IXTT75N20L2, manufactured by IXYS, is a 200V, N-Channel Polar L2 Power MOSFET designed for high-efficiency, high-speed switching applications. This MOSFET is particularly well-suited for use in resonant mode power supplies and other applications requiring low switching losses and fast body diode recovery.

Applications:

  • Resonant mode power supplies: High-efficiency power conversion in resonant topologies.
  • Phase-shifted full-bridge converters: Efficient power conversion in isolated DC-DC converters.
  • ZVS (Zero Voltage Switching) applications: Minimizing switching losses for higher efficiency.
  • High-frequency inverters: Converting DC to AC at high frequencies.
  • Plasma display panels (PDPs): Driving the switches in PDP power supplies.
  • Induction heating: Generating high-frequency AC for heating applications.

Features:

  • Low RDS(on): Minimizes conduction losses, improving efficiency.
  • Fast switching speed: Enables high-frequency operation with reduced switching losses.
  • Low gate charge (Qg): Reduces gate drive requirements and switching losses.
  • Fast body diode recovery: Improves efficiency and reduces noise in switching circuits.
  • Avalanche rated: Withstands transient voltage spikes.
  • Enhancement mode: Easy to drive with standard gate drive voltages.

Benefits:

  • High efficiency: Reduces power losses and lowers operating costs.
  • Improved system performance: Faster switching speeds and lower losses enhance overall performance.
  • Reduced EMI: Fast body diode recovery minimizes noise generation.
  • Reliable operation: Robust design ensures dependable performance in demanding applications.
  • Simplified design: Easy to integrate into various power electronic circuits.

Additional Details:

The IXTT75N20L2 utilizes advanced power MOSFET technology to achieve low on-state resistance, fast switching speeds, and a fast body diode. The fast body diode recovery characteristic is particularly important in resonant mode converters and ZVS applications, where it helps to reduce switching losses and improve efficiency. The MOSFET is typically packaged in a TO-247 package. Specific voltage and current ratings, as well as the on-state resistance value, can be found in the product datasheet. Proper thermal management is essential. A suitable heatsink should be used to dissipate heat effectively and ensure reliable operation.

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