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Same model may have multiple batches, images only for reference.
IXTU06N120P Real Image
Same model may have multiple batches, images only for reference.

IXTU06N120P

Part No IXTU06N120P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1200V 600MA TO251 / N-Channel 1200 V 600mA (Tc) Through Hole TO-251AA
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series Polar
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 600mA (Tc)
Mounting Type Through Hole
Supplier Device Package TO-251AA
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number IXTU06
Standard Package 75
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1346682-IXTU06N120P
Ultra Librarian 3D Model Ultra Librarian IXTU06N120P CAD Model

Description

The IXYS IXTU06N120P is an N-channel MOSFET designed for use in various applications such as power supplies, lighting, and motor control. IXTU06N120P IXYS.

  • Drain-Source Voltage: 1200V
  • Continuous Drain Current: 600mA (Tc)
  • Mounting: Through-hole
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Popularity: Medium
  • Status: Active

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