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Same model may have multiple batches, images only for reference.
IXTU8N70X2 Real Image
Same model may have multiple batches, images only for reference.

IXTU8N70X2

Part No IXTU8N70X2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 700V 8A TO251-3 / N-Channel 700 V 8A (Tc) 150W (Tc) Through Hole TO-251-3
Datasheet
IXTU8N70X2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series Ultra X2
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 700 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 500mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 800 pF @ 10 V
Power Dissipation (Max) 150W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-251-3
Package / Case TO-251-3 Stub Leads, IPak
Base Product Number IXTU8
Standard Package 70
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1346830-IXTU8N70X2
Ultra Librarian 3D Model Ultra Librarian IXTU8N70X2 CAD Model

Description

The IXTU8N70X2 is an N-channel MOSFET transistor from IXYS.

  • Series: Ultra X2 series
  • Package: TO-251-3
  • Drain to Source Voltage: 700V
  • Power Dissipation: 150W
  • Continuous Drain Current: 8A @ 25°C
  • On Resistance: 500mOhm @ 500mA and 10V
  • Gate Charge: 12 nC @ 10V
  • Input Capacitance: 800 pF @ 10V
  • Operating Temperature: -55°C to 150°C (TJ)
  • ECCN: EAR99
  • Mounting Type: Through-hole Mount

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