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IXTV200N10TS

Part No IXTV200N10TS
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 200A PLUS220SMD / N-Channel 100 V 200A (Tc) 550W (Tc) Surface Mount PLUS-220SMD
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Rohs State Need to verify
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series TrenchMV™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 152 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 9400 pF @ 25 V
Power Dissipation (Max) 550W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PLUS-220SMD
Package / Case PLUS-220SMD
Base Product Number IXTV200
Standard Package 50
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1346769-IXTV200N10TS
Ultra Librarian 3D Model Ultra Librarian IXTV200N10TS CAD Model

Description

The IXTV200N10TS is a MOSFET transistor with an N-channel FET type and a TrenchMV series.

  • Manufacturer: IXYS
  • FET Type: MOSFET
  • Channel Type: N-Channel
  • Series: TrenchMV
  • Drain to Source Voltage: 100 V
  • Power Dissipation: 550W (Tc)
  • Mounting Type: Surface Mount
  • Package: PLUS-220SMD
  • Standard Package: 50
  • Vgs (Max): ±30V
  • Temperature Range: -55°C to 175°C (TJ)
  • ECCN: EAR99
  • REACH: Unaffected
  • HTSUS Code: 8541.29.0095
  • Current: 200A (Tc)
  • Rds On (Max): 5.5mOhm @ 50A, 10V
  • Suitable for: various electronic applications

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