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Same model may have multiple batches, images only for reference.
IXTY02N50D Real Image
Same model may have multiple batches, images only for reference.

IXTY02N50D

Part No IXTY02N50D
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 0.2A DPAK
Datasheet
IXTY02N50D Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 200mA (Tc)
Max Input Capacitance 120pF @ 25V
Maximum Gate-Source Voltage ±20V
FET Feature Depletion Mode
Power Dissipation (Max) 1.1W (Ta), 25W (Tc)
Maximum Rds On at Id,Vgs 30 Ohm @ 50mA, 0V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252, (D-Pak)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1049968-IXTY02N50D
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXTY02N50D CAD Model

Description

It is an N-channel MOSFET with a depletion mode FET feature.

  • Feature: Depletion Mode FET
  • Drain-Source Breakdown Voltage: 500V
  • Maximum Rds On at Id, Vgs: 30 Ohm @ 50mA, 0V
  • Power Dissipation: 1.1W (Ta), 25W (Tc)

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6063 $56.2205
80+ $1.3180 $105.4400
120+ $1.2768 $153.2160
165+ $1.2356 $203.8740
210+ $1.1945 $250.8450
285+ $1.0709 $305.2065
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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