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Same model may have multiple batches, images only for reference.
IXTY1R6N100D2 Real Image
Same model may have multiple batches, images only for reference.

IXTY1R6N100D2

Part No IXTY1R6N100D2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description Depletion Mode MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 1000V
Current - Continuous Drain (Id) @ 25°C 1.6A (Tc)
Gate Charge (Qg) (Maximum) @ Vgs 27nC @ 5V
Input Capacitance (Ciss) (Maximum) @ Vds 645pF @ 25V
Vgs (Maximum) ±20V
FET Feature Depletion Mode
Power Dissipation (Maximum) 100W (Tc)
Rds On (Maximum) @ Id, Vgs 10 Ohm @ 800mA, 0V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package TO-252, (D-Pak)
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1191305-IXTY1R6N100D2
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Quantity per package 70
Family Name IXTY1R6N100D2
Introduction Date March 28, 2011
ECCN EAR99
Country of Origin Republic of Korea
Estimated EOL Date 2025
Ultra Librarian 3D Model Ultra Librarian IXTY1R6N100D2 CAD Model

Description

The IXTY1R6N100D2 is a depletion mode MOSFET manufactured by IXYS.

  • Type: N-channel MOSFET
  • Drain Source Voltage: 1000V
  • Maximum Power Dissipation: 100W (Tc)
  • FET Feature: Depletion Mode
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Drain Current @ 25°C: 1.6A (Tc)
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Mounting Technology: SMD
  • Gate Charge (Qg): 27nC @ 5V
  • Input Capacitance (Ciss): 645pF @ 25V
  • Rds On (Maximum) @ Id, Vgs: 10 Ohm @ 800mA, 0V
  • Family: Discrete Semiconductor Products

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $5.2800 $52.8000
24+ $4.3323 $103.9752
36+ $4.1969 $151.0884
50+ $4.0616 $203.0800
64+ $3.9262 $251.2768
86+ $3.5200 $302.7200
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