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Same model may have multiple batches, images only for reference.
IXTY1R6N50D2 Real Image
Same model may have multiple batches, images only for reference.

IXTY1R6N50D2

Part No IXTY1R6N50D2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 1.6A DPAK
Datasheet
IXTY1R6N50D2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 1.6A (Tc)
Max Gate Charge 23.7nC @ 5V
Max Input Capacitance 645pF @ 25V
Maximum Gate-Source Voltage ±20V
FET Feature Depletion Mode
Power Dissipation (Max) 100W (Tc)
Maximum Rds On at Id,Vgs 2.3 Ohm @ 800mA, 0V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252, (D-Pak)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1049974-IXTY1R6N50D2
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXTY1R6N50D2 CAD Model

Description

The IXYS MOSFET is a high-performance N-channel depletion mode FET designed for use in discrete semiconductor products.

  • Power Dissipation: 100W (Tc)
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 1.6A (Tc) @ 25°C
  • Maximum Gate Charge: 23.7nC @ 5V
  • Package: TO-252, (D-Pak)
  • Dimensions: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Maximum Rds On at Id,Vgs: 2.3 Ohm @ 800mA, 0V

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