The IXTY2N100P-TRL is a MOSFET transistor from IXYS that is designed for use in discrete semiconductor products such as transistors, FETs, and MOSFETs. This N-channel FET features a drain to source voltage (Vdss) of 1000 V and a power dissipation (Max) of 86W (Tc).

• Drain to Source Voltage (Vdss): 1000 V
• Power Dissipation (Max): 86W (Tc)
• Mounting Type: Surface-Mounted
• Package: TO-252-3, DPak (2 Leads + Tab) , SC-63
• Drive Voltage: 10V
• Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
• Rds On (Max) @ Id, Vgs: 7.5Ohm @ 1A, 10V
• Vgs(th) (Max) @ Id: 4.5V @ 100μA
• Gate Charge (Qg) (Max) @ Vgs: 24.3 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 25 V