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Same model may have multiple batches, images only for reference.
MII75-12A3
Same model may have multiple batches, images only for reference.

MII75-12A3

Part No MII75-12A3
Manufacturer IXYS
Catalog IGBTs - Modules
Description IGBT MODULE 1200V 90A 370W Y4M5 / IGBT Module NPT Half Bridge 1200 V 90 A 370 W Chassis Mount Y4-M5
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Modules
Mfr IXYS
Package Box
IGBT Type NPT
Configuration Half Bridge
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 90 A
Power - Max 370 W
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 50A
Current - Collector Cutoff (Max) 4 mA
Input Capacitance (Cies) @ Vce 3.3 nF @ 25 V
Input Standard
NTC Thermistor No
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Package / Case Y4-M5
Supplier Device Package Y4-M5
Base Product Number MII75
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 6
Win Source Part Number 1063918-MII75-12A3
Ultra Librarian 3D Model Ultra Librarian MII75-12A3 CAD Model

Description

The MII75-12A3 is a half-bridge IGBT transistor module manufactured by IXYS.

  • Power: 370W
  • Collector-Emitter Breakdown Voltage: 1200V
  • Current Collector (Ic): 90A
  • Vce(on): 2.7V @ 15V, 50A
  • Package: Chassis mount, Y4-M5

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $63.4436 $63.4436
3+ $52.0563 $156.1689
4+ $50.4296 $201.7184
5+ $48.8028 $244.0140
7+ $47.1761 $330.2327
9+ $42.2958 $380.6622
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