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Same model may have multiple batches, images only for reference.
MKI50-12E7
Same model may have multiple batches, images only for reference.

MKI50-12E7

Part No MKI50-12E7
Manufacturer IXYS
Catalog IGBTs - Modules
Description MOD IGBT H-BRIDGE 1200V 90A E2 / Trans IGBT Module N-CH 1200V 90A 350000mW 18-Pin E2
Datasheet
MKI50-12E7 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Part Status Obsolete(EOL)
IGBT Type NPT
Configuration Full Bridge Inverter
Voltage - Collector Emitter Breakdown (Maximum) 1200V
Current - Collector (Ic) (Maximum) 90A
Power - Max 350W
Vce(on) (Maximum) @ Vge, Ic 2.4V @ 15V, 50A
Current - Collector Cutoff (Maximum) 800μA
Input Capacitance (Cies) @ Vce 3.8nF @ 25V
Input Standard
NTC Thermistor No
Operating Temperature Range -40°C ~ 125°C (TJ)
Mounting Chassis Mount
Package E2
Manufacturer Package E2
Win Source Part Number 788925-MKI50-12E7
Popularity Medium
Supply and Demand Status Limited
Family Name MKI50-12E7
Introduction Date August 11, 2002
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian MKI50-12E7 CAD Model

Description

The IXYS MKI50-12E7 is a full bridge inverter configuration discrete semiconductor product. The device package is E2, and the mounting is chassis mount.

  • Package: E2
  • Mounting: Chassis Mount
  • Maximum Power: 350W
  • Input: Standard
  • IGBT Type: NPT
  • Input Capacitance: 3.8nF @ 25V
  • Status: Obsolete (EOL)
  • Family: MKI50-12E7
  • Operating Temperature: -40°C to 125°C (TJ)
  • Current-Collector (Ic) (Maximum): 90A
  • Voltage-Collector Emitter Breakdown (Maximum): 1200V
  • Current-Collector Cutoff (Maximum): 800μA
  • Vce(on) (Maximum) @ Vge, Ic: 2.4V @ 15V, 50A

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