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Same model may have multiple batches, images only for reference.
VMM650-01F Real Image
Same model may have multiple batches, images only for reference.

VMM650-01F

Part No VMM650-01F
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description Dual Power HiPerFETTM Module
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Series HiPerFET
Packaging Bulk
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 680A
Rds On (Maximum) @ Id, Vgs 2.2 mOhm @ 500A, 10V
Vgs(th) (Maximum) @ Id 4V @ 30mA
Gate Charge (Qg) (Maximum) @ Vgs 1440nC @ 10V
Operating Temperature Range -40°C ~ 150°C (TJ)
Mounting Chassis Mount
Package Y3-Li
Manufacturer Package Y3-Li
RoHS State Request Verification
Win Source Part Number 1279413-VMM650-01F
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Family Name VMM650-01F
Introduction Date October 21, 2000
ECCN EAR99
Country of Origin Germany
Estimated EOL Date 2019
Ultra Librarian 3D Model Ultra Librarian VMM650-01F CAD Model

Description

The IXYS HiPerFET VMM650-01F is a 2 N-Channel (Dual) FET that comes with a Standard FET Feature.

  • Drain Source Voltage: 100V
  • Vgs(th) (Maximum) @ Id: 4V @ 30mA
  • FET Type: MOSFET (Metal Oxide)
  • Rds On (Maximum) @ Id, Vgs: 2.2 mOhm @ 500A, 10V
  • Gate Charge (Qg) (Maximum) @ Vgs: 1440nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: not specified
  • FET Mounting: Chassis Mounting
  • Package: Y3-Li Package
  • Operating Temperature Range: -40°C ~ 150°C (TJ)
  • Application: ideal for use in Discrete Semiconductor Products.

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