The 2N5551S-RTK is a high-voltage NPN bipolar junction transistor (BJT) manufactured by KEC. This transistor is designed for use in high-voltage switching and amplification applications. Its high breakdown voltage makes it suitable for a wide range of linear and switching circuits.

Applications:

• High-voltage switching circuits
• Linear amplifiers
• Oscillators
• Voltage regulators
• Driver stages

Features:

• NPN Bipolar Junction Transistor
• High Breakdown Voltage (VCEO)
• Low Collector-Emitter Saturation Voltage
• High Current Gain (hFE)
• Surface Mount Package

Benefits:

• Reliable performance in high-voltage applications due to its high breakdown voltage.
• Efficient switching due to low saturation voltage.
• Good amplification characteristics due to high current gain.
• Compact design due to surface mount package.
• Versatile for use in a wide range of circuits.

Specifications:

The 2N5551S-RTK features a collector-emitter voltage (VCEO) of typically 160V, a collector current (IC) of 600mA, and a power dissipation of 625mW. The current gain (hFE) typically ranges from 80 to 250, depending on the operating conditions. The saturation voltage (VCE(sat)) is typically low, ensuring efficient switching. It is available in a surface-mount package, such as SOT-23 or similar. For precise design and thermal considerations, consult the datasheet.

In summary, the 2N5551S-RTK NPN BJT is ideal for applications requiring high-voltage switching or linear amplification. Its robust characteristics and compact package make it a versatile choice for numerous electronic designs.