The KTC802E-RTK is an NPN silicon epitaxial transistor manufactured by KEC (Korea Electronics Co., Ltd.). This transistor is designed for general purpose amplifier and switching applications.

Applications

• Amplifier Circuits: Used as a general-purpose amplifier in various electronic circuits.
• Switching Circuits: Suitable for use as a switch in low to medium power applications.
• Signal Processing: Used in signal processing circuits for amplification and switching.
• Consumer Electronics: Common in various consumer electronic devices like radios and small appliances.

Features

• NPN Silicon Epitaxial Transistor: Offers stable performance and consistent characteristics.
• High Current Gain (hFE): Provides good amplification capability.
• Low Saturation Voltage: Ensures efficient switching operation.
• Small Package Size: Allows for easy integration into compact electronic designs.

Benefits

• Versatile Application: Suitable for a wide range of amplifier and switching applications.
• Efficient Performance: Delivers efficient operation due to its high gain and low saturation voltage.
• Reliable Operation: Ensures stable and reliable performance in various operating conditions.
• Simplified Circuit Design: Easy to integrate into different circuit designs.

Technical Specifications

• Collector-Base Voltage (VCBO): 60V
• Collector-Emitter Voltage (VCEO): 50V
• Emitter-Base Voltage (VEBO): 6V
• Collector Current (IC): 0.15A
• Collector Dissipation (PC): 0.25W
• DC Current Gain (hFE): Typically between 120 and 270 (at IC = 1mA, VCE = 5V)
• Operating and Storage Temperature: -55°C to +150°C

The KTC802E-RTK is a reliable and versatile transistor suitable for a broad spectrum of applications. Its stable characteristics and efficient performance make it a popular choice in various electronic devices. Always refer to the manufacturer's datasheet for detailed specifications and application guidelines before use.