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Same model may have multiple batches, images only for reference.
LSIC1MO120E0080 Real Image
Same model may have multiple batches, images only for reference.

LSIC1MO120E0080

Part No LSIC1MO120E0080
Manufacturer Littelfuse Inc.
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
LSIC1MO120E0080 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Littelfuse Inc.
Package Tube
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id 4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 95 nC @ 20 V
Vgs (Max) +22V, -6V
Input Capacitance (Ciss) (Max) @ Vds 1825 pF @ 800 V
Power Dissipation (Max) 179W (Tc)
Temperature Range - Operating -55°C ~ 150°C
Mounting Type Through Hole
Supplier Device Package TO-247AD
Package / Case TO-247-3
Other Names -LSIC1MO120E0080,F10335
Standard Package 30
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278258-LSIC1MO120E0080
Ultra Librarian 3D Model Ultra Librarian LSIC1MO120E0080 CAD Model

Description

This SiCFET (Silicon Carbide) N-Channel FET is a high-performance transistor that can handle a continuous drain current of 39A (Tc) @ 25°C.

  • Drain-to-Source Voltage: 1200V
  • Maximum On-Resistance: 100mOhm @ 20A and 20V
  • Gate Charge: 95nC @ 20V
  • Input Capacitance: 1825pF @ 800Vds
  • Maximum Vgs: +22V, -6V
  • Operating Temperature Range: -55°C to 150°C
  • Mounting: Through hole
  • Package: TO-247-3
  • Power Dissipation: 179W (Tc)

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $29.1045 $58.2090
5+ $23.8806 $119.4030
7+ $23.1344 $161.9408
9+ $22.3881 $201.4929
12+ $21.6418 $259.7016
16+ $19.4030 $310.4480
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Availability: 545 pieces
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