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Same model may have multiple batches, images only for reference.
MRF10120 Real Image
Same model may have multiple batches, images only for reference.

MRF10120

Part No MRF10120
Manufacturer M/A-Com Technology Solutions
Catalog RF Transistors (BJT)
Description RF TRANS NPN 55V 355C-02 / RF Transistor NPN 55V 15A 120W Chassis Mount 355C-02, Style 1
Datasheet
MRF10120 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF
Mfr MACOM Technology Solutions
Package Tray
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 55V
Gain 8.5dB
Power - Max 120W
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 5A, 5V
Current - Collector (Ic) (Max) 15A
Temperature Range - Operating 200°C (TJ)
Mounting Type Chassis Mount
Package / Case 355C-02
Supplier Device Package 355C-02, Style 1
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 1465-1139
Standard Package 20
Win Source Part Number 1080391-MRF10120
Ultra Librarian 3D Model Ultra Librarian MRF10120 CAD Model

Description

The MRF10120 is a bipolar (BJT) RF transistor that is a part of the Discrete Semiconductor Products category.

  • Maximum Power: 120W
  • Voltage Breakdown: 55V
  • Current Collector: 15A
  • Gain: 8.5dB
  • Transistor Type: NPN
  • DC Current Gain (hFE): 20 @ 5A, 5V
  • Compliance: EAR99 regulations

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