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Same model may have multiple batches, images only for reference.
SI3139KL3-TP Real Image
Same model may have multiple batches, images only for reference.

SI3139KL3-TP

Part No SI3139KL3-TP
Manufacturer Micro Commercial Co
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SI3139KL3-TP Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Micro Commercial Co
Package Tape & Reel (TR)
Product Status Not For New Designs
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 660mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 500mOhm @ 150mA, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 113 pF @ 16 V
Power Dissipation (Max) 100mW
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package DFN1006-3
Package / Case SC-101, SOT-883
Base Product Number SI3139
Other Names 353-SI3139KL3-TPTR
Standard Package 10,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1278243-SI3139KL3-TP
Ultra Librarian 3D Model Ultra Librarian SI3139KL3-TP CAD Model

Description

The SI3139KL3-TP is an electronic component suitable for use in various electronic applications.

  • Win Source Part Number: 1278243-SI3139KL3-TP
  • Device Type: P-channel MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
  • Rds On (Max) @ Id, Vgs: 500mOhm @ 150mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250μA
  • Power Dissipation (Max): 100mW
  • Temperature Range: -55°C to 150°C (TJ)
  • Mounting Technology: SMD (SMT)
  • Case/Package: SC-101, SOT-883

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