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2N5152

Part No 2N5152
Manufacturer Microchip Technology
Catalog Transistors (BJT) - Single
Description NPN SILICON TRANSISTOR
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Microchip Technology
Package Bulk
Product Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 2 A
Voltage - Collector Emitter Breakdown (Max) 80 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max) 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 2.5A, 5V
Power - Max 1 W
Temperature Range - Operating -65°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Supplier Device Package TO-39
Base Product Number 2N5152
Standard Package 1 pcs
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 541239-2N5152
Ultra Librarian 3D Model Ultra Librarian 2N5152 CAD Model

Description

The 2N5152 from Microchip Technology is a high-quality, robust NPN bipolar junction transistor (BJT) designed for a variety of applications that require reliable switching and amplification. This component is well-suited for industrial, commercial, and military use due to its stable performance and durability.

Key Features

  • High Current Gain Bandwidth Product: The 2N5152 offers a high transition frequency, making it suitable for applications that demand fast switching and high-frequency operation.
  • Durable Construction: Manufactured with Microchip Technology’s precision, the 2N5152 is built to withstand harsh conditions and provide reliable performance over its lifespan.
  • Versatile Application Range: This BJT can be utilized in a wide array of electronic circuits, including amplifiers, oscillators, and switching devices, showcasing its adaptability to different electronic needs.
  • High Power Dissipation: With an ability to handle significant power levels, the 2N5152 is an excellent choice for circuits that require a transistor with a high-power dissipation capability.

Electrical Specifications

Parameter Value Collector-Emitter Voltage (V<sub>CEO) 60 V Collector-Base Voltage (V<sub>CBO) 80 V Emitter-Base Voltage (V<sub>EBO) 7 V Collector Current (I<sub>C) 4 A Power Dissipation (P<sub>D) 5 W Operating Junction Temperature (T<sub>j) -65°C to +200°C

Applications

The 2N5152 is ideal for deployment in a broad spectrum of electronic circuits. Its high-speed switching capabilities make it an excellent choice for digital logic circuits, while its linear amplification properties are perfect for analog signal processing. Additionally, its robustness and high power handling make it a reliable component in power regulation systems and motor control circuits.

Quality and Reliability

As with all Microchip Technology products, the 2N5152 is manufactured to the highest quality standards, ensuring consistent performance and reliability. Whether for commercial, industrial, or military applications, this transistor is designed to meet the stringent requirements of any electronic system.

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