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2N6301

Part No 2N6301
Manufacturer Microchip Technology
Catalog Transistors (BJT) - Single
Description NPN TRANSISTOR
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Microchip Technology
Package Bulk
Product Status Active
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 8 A
Voltage - Collector Emitter Breakdown (Max) 80 V
Vce Saturation (Max) @ Ib, Ic 3V @ 80mA, 8A
Current - Collector Cutoff (Max) 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 4A, 3V
Power - Max 75 W
Temperature Range - Operating -55°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case TO-213AA, TO-66-2
Supplier Device Package TO-66 (TO-213AA)
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 854982-2N6301
Ultra Librarian 3D Model Ultra Librarian 2N6301 CAD Model

Description

The 2N6301 is a robust silicon NPN power transistor designed by Microchip Technology, a leader in the field of smart, connected, and secure embedded control solutions. This transistor is specifically engineered to handle high-power applications and is commonly utilized in a wide range of industrial, commercial, and military environments.

With its excellent power handling capabilities, the 2N6301 is ideal for linear and switching applications. It features a high current rating, enabling it to drive substantial loads, and it operates efficiently in environments where power density is a critical factor. This makes it a reliable choice for power amplifiers, voltage regulators, motor controllers, and other high-power circuits.

The construction of the 2N6301 transistor is focused on durability and performance. It is encapsulated in a TO-3 package, known for its robustness and superior heat dissipation characteristics. This package allows the transistor to maintain stability and functionality even under stressful thermal conditions, ensuring a longer operational lifespan.

Key specifications of the 2N6301 include a high collector-emitter voltage (VCEO), which allows it to withstand significant voltage without breakdown, and a substantial collector current (IC) rating, which is indicative of the transistor's ability to handle high current throughput. The device also features low saturation voltage, which contributes to its efficiency by minimizing power loss during operation.

Microchip Technology's commitment to quality is evident in the 2N6301, as it is manufactured to meet stringent standards, ensuring reliability and performance consistency. For designers and engineers looking for a power transistor that offers both strength and precision, the 2N6301 is an excellent choice that combines Microchip's technological expertise with practical design considerations.

Whether it's for use in power supply circuits, audio equipment, or rugged industrial machinery, the 2N6301 from Microchip Technology stands as a testament to the company's dedication to providing high-quality, reliable components for the most demanding applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $61.5649 $61.5649
2+ $50.5148 $101.0296
4+ $48.9362 $195.7448
5+ $47.3576 $236.7880
6+ $45.7790 $274.6740
8+ $41.0432 $328.3456
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 23 pieces
Order Increment : 1 pcs
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