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JAN2N3499

Part No JAN2N3499
Manufacturer Microchip Technology
Catalog Transistors (BJT) - Single
Description TRANS NPN 100V 0.5A TO-39
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 29 Weeks
Features Bipolar (BJT) Transistor NPN 100 V 500 mA - 1 W Through Hole TO-39 (TO-205AD)
Manufacturer Microchip Technology
Series Military, MIL-PRF-19500/366
Package Bulk
Operating Temperature Range -65°C ~ 200°C (TJ)
Mounting Through Hole
Package TO-205AD, TO-39-3 Metal Can
Case / Package TO-39 (TO-205AD)
Family Name 2N3499
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 1086-20824, 1086-20824-MIL
Quantity per package 1
Popularity High
Supply and Demand Status Balance
Win Source Part Number 922286-JAN2N3499
Ultra Librarian 3D Model Ultra Librarian JAN2N3499 CAD Model

Description

Product Overview: JAN2N3499 NPN Transistor

The JAN2N3499 is a high-quality NPN bipolar junction transistor (BJT) designed and manufactured by Microchip Technology, a leader in the semiconductor industry. This transistor is part of Microchip Technology's range of radiation-hardened electronic components, specifically engineered to withstand the harsh conditions of space and other high-radiation environments. The JAN2N3499 is designed to meet the stringent requirements of the Joint Army/Navy (JAN) specifications, indicating its reliability and robustness for military and aerospace applications.

Key Features and Benefits:

  • High Reliability: The JAN2N3499 is built to meet or exceed the military specifications for space-level products, ensuring consistent performance under extreme conditions.
  • Radiation Hardened: With its radiation-hardened design, this transistor can operate in environments with high levels of ionizing radiation without degradation of its electrical properties.
  • High Power Handling: This NPN transistor is capable of handling high power levels, making it suitable for power amplification and switching applications in satellite and defense systems.
  • Wide Operating Temperature Range: It operates effectively across a broad temperature range, which is critical for space and military applications where temperature variations can be extreme.
  • Versatile Use: The JAN2N3499 can be used in a variety of electronic circuits, including power regulators, converters, and amplifiers, offering flexibility in design and implementation.

Electrical Characteristics:

The JAN2N3499 offers excellent electrical characteristics that include a collector-emitter voltage (Vceo) of 300V, collector-base voltage (Vcbo) of 350V, and emitter-base voltage (Vebo) of 7V. It has a collector current (Ic) rating of up to 1A, which makes it suitable for moderate current handling applications.

Applications:

Due to its rugged design and reliable performance, the JAN2N3499 is ideal for use in high-reliability applications such as:

  • Satellite communication systems
  • Space exploration equipment
  • Military hardware
  • Aerospace instrumentation
  • Nuclear power plant controls

Overall, the JAN2N3499 from Microchip Technology is a testament to the company's commitment to providing high-reliability components that meet the demanding needs of the aerospace, defense, and high-radiation industries.

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