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JANS2N5666S

Part No JANS2N5666S
Manufacturer Microchip Technology
Catalog RF Transistors (BJT)
Description TRANS NPN 200V 5A TO39 / Bipolar (BJT) Transistor NPN 200 V 5 A 1.2 W Through Hole TO-39 (TO-205AD)
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Microchip Technology
Series Military, MIL-PRF-19500/455
Package Bulk
Transistor Type NPN
Current - Collector (Ic) (Max) 5 A
Voltage - Collector Emitter Breakdown (Max) 200 V
Vce Saturation (Max) @ Ib, Ic 1V @ 1A, 5A
Current - Collector Cutoff (Max) 200nA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 1A, 5V
Power - Max 1.2 W
Temperature Range - Operating -65°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Supplier Device Package TO-39 (TO-205AD)
Base Product Number 2N5666
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1
Win Source Part Number 1223253-JANS2N5666S
Ultra Librarian 3D Model Ultra Librarian JANS2N5666S CAD Model

Description

Introducing the JANS2N5666S from Microchip Technology

The JANS2N5666S is a state-of-the-art, high-reliability NPN bipolar junction transistor (BJT) developed by Microchip Technology, a leader in the semiconductor industry. This transistor is specifically designed to meet the stringent requirements of aerospace and defense applications, ensuring optimal performance in even the most demanding environments.

Key Features

  • High Voltage Tolerance: The JANS2N5666S is capable of withstanding high voltage applications, making it suitable for power regulation and switching.
  • Robust Power Handling: With its ability to handle significant power levels, this transistor is ideal for high-power circuits, offering reliable operation over a wide range of conditions.
  • Quality and Reliability: As part of Microchip's military-grade product offerings, the JANS2N5666S undergoes rigorous testing to ensure it meets the highest quality standards and is compliant with the Joint Army/Navy (JAN) specifications.
  • Hermetic Packaging: The device is enclosed in a hermetically sealed package, which protects it against environmental factors such as moisture and dust, thus enhancing its durability and lifespan.

Applications

The versatility of the JANS2N5666S allows it to be used in a variety of high-reliability applications, including:

  • Power supply systems
  • Motor controls
  • Linear and switching regulators
  • Amplifiers
  • Hardened electronic equipment

Technical Specifications

The JANS2N5666S boasts impressive technical specifications that contribute to its exceptional performance:

  • Collector-Emitter Voltage (Vceo): 300V
  • Collector Base Voltage (Vcbo): 350V
  • Emitter Base Voltage (Vebo): 7V
  • Collector Current (Ic): 10A
  • Power Dissipation (Pd): 175W

Microchip Technology's commitment to excellence is evident in the JANS2N5666S, offering a reliable and durable solution for high-performance applications. With its robust design and superior electrical characteristics, this transistor is an excellent choice for engineers looking for components that can deliver consistent results under the toughest conditions.

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