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TN2524N8-G

Part No TN2524N8-G
Manufacturer Microchip Technology
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 240V 360MA SOT89-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Microchip Technology
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 240V
Continuous Drain Current at 25°C 360mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Input Capacitance 125pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.6W (Tc)
Maximum Rds On at Id,Vgs 6 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-243AA (SOT-89)
Dimension TO-243AA
Win Source Part Number 102749-TN2524N8-G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TN2524N8-G CAD Model

Description

Microchip Technology's TN2524N8-G: A Robust Power MOSFET

The TN2524N8-G, a high-performance power MOSFET from Microchip Technology, is a state-of-the-art semiconductor device designed to handle significant power levels with impressive efficiency. This component is a staple in the realm of power management, offering a blend of robustness and reliability that engineers and designers in the electronics industry have come to expect from Microchip Technology.

Constructed with advanced processing techniques, the TN2524N8-G boasts a low on-resistance, which translates to reduced power losses and improved energy efficiency in applications. This characteristic is particularly important in high-current scenarios, where the MOSFET operates as a switch, ensuring minimal voltage drop and heat generation.

Featuring a maximum continuous drain current of 240 mA and a drain-source voltage of 240 V, the TN2524N8-G is capable of tackling a wide array of applications, from power supply circuits to motor control systems. Its threshold voltage is tailored to ensure a precise switching action, which is essential for sensitive electronic devices that require accurate power modulation.

The TN2524N8-G is housed in a TO-92 package, a widely used encapsulation that provides a balance between thermal performance and compactness. This form factor allows the MOSFET to be easily integrated into various circuit designs without taking up excessive space, making it a versatile choice for both prototyping and mass production.

Furthermore, the TN2524N8-G is equipped with inherent protection features that safeguard it against adverse conditions such as overcurrent and thermal stress. This resilience ensures a long operational lifespan and reduces the likelihood of device failure, which is critical for maintaining the integrity of the entire electronic system in which it is deployed.

Overall, the TN2524N8-G from Microchip Technology exemplifies the company's commitment to providing high-quality, reliable components that meet the rigorous demands of modern electronics. Whether used in industrial equipment, consumer electronics, or automotive systems, this power MOSFET is engineered to deliver optimal performance and durability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $4.0909 $53.1817
30+ $3.3567 $100.7010
47+ $3.2518 $152.8346
64+ $3.1469 $201.4016
83+ $3.0420 $252.4860
110+ $2.7273 $300.0030
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 24 pieces
MOQ: 13 pcs
Order Increment : 1 pcs
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