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VP2206N2

Part No VP2206N2
Manufacturer Microchip Technology
Catalog FETs - Single
Description P-Channel Enhancement-Mode Vertical DMOS FETs | MOSFET P-CH 60V 750MA 3TO-39
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microchip Technology
Packaging Bulk
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 60V
Id - Continuous Drain Current 750mA
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Maximum) at Id, Vgs 900mOhm at 3.5A, 10V
Gate Source Voltage(th) (Maximum) at Id 3.5V at 10mA
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 450pF at 25V
Power Dissipation (Maximum) 360mW
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-39
Manufacturer Package TO-205AD, TO-39-3 Metal Can
Manufacturer Pack Quantity 500
MSL Level 1 (Unlimited)
Win Source Part Number 1279749-VP2206N2
Manufacturer Homepage www.supertex.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian VP2206N2 CAD Model

Description

Microchip Technology's VP2206N2 - A Robust Power MOSFET Solution

The VP2206N2 from Microchip Technology is an advanced power MOSFET designed to deliver high efficiency and reliability for a diverse range of applications. This particular semiconductor device is an integral component for engineers looking to optimize their power management systems. The VP2206N2 stands out due to its impressive features that cater to the demanding requirements of modern electronic circuits.

With a drain-to-source voltage (Vds) of 60V, the VP2206N2 can comfortably handle moderate voltage operations, making it suitable for a variety of industrial and consumer applications. It boasts a continuous drain current (Id) capability that ensures the device can support applications with higher current demands without succumbing to stress.

The low on-resistance (Rds(on)) of this MOSFET is one of its key attributes, allowing for more efficient power usage and reduced heat generation. This characteristic is crucial for extending the lifespan of the product and maintaining performance over time. The VP2206N2's fast switching speed also contributes to its efficiency, enabling quick transitions between on and off states, further minimizing power losses.

Designed with a TO-220 package, the VP2206N2 offers a robust and durable form factor that can withstand harsh environments while providing excellent thermal performance. This packaging ensures that the MOSFET can be easily integrated into various circuit designs without the need for specialized mounting techniques.

Microchip Technology's commitment to quality is evident in the VP2206N2, with rigorous testing and quality control measures in place to ensure that each unit meets the highest standards of performance and reliability. Whether it's for power supply units, motor control systems, or any other application requiring efficient power handling, the VP2206N2 is a reliable choice that engineers can trust.

In conclusion, the VP2206N2 from Microchip Technology is a testament to the company's innovation in the field of power management. With its combination of high voltage capacity, low resistance, fast switching, and robust packaging, this power MOSFET is a versatile and dependable component for a wide array of electronic applications.

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